Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

Monolithically combining silicon nitride ( S mathvariant="normal">i mathvariant="normal">N mathvariant="normal">x ) photonics technology with III-V active devices could open a broad range of on-chip applications spanning wide wavelength ? 400 ?<!-- ? <mml:mn>4000 mathvariant="normal">n mathvariant="normal">m . With the development nitride, arsenide, and antimonide lasers based on quantum well (QW) dot (QD) regions, palette integrated Si currently spans 400 nm to 11 µm, crucial gap in red-wavelength regime 630–750 nm. Here, we demonstrate red mathvariant="normal">I 0.6 mathvariant="normal">G mathvariant="normal">a 0.4 mathvariant="normal">P QW far-red InP QD monolithically grown CMOS-compatible (001) substrates continuous-wave operation at room temperature. A low-threshold current density 550 mathvariant="normal">A / mathvariant="normal">c 2 690 emission 680–730 was achieved for Si, respectively. This work represents step toward integration visible allowing utilization including biophotonic sensing, computing, near-eye displays.